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|Title:||Selective excitation and thermal quenching of the yellow luminescence of GaN||Authors:||Colton, J.S.
|Issue Date:||22-Nov-1999||Citation:||Colton, J.S.,Yu, P.Y.,Teo, K.L.,Weber, E.R.,Perlin, P.,Grzegory, I.,Uchida, K. (1999-11-22). Selective excitation and thermal quenching of the yellow luminescence of GaN. Applied Physics Letters 75 (21) : 3273-3275. ScholarBank@NUS Repository.||Abstract:||We report the observation of narrower structures in the yellow luminescence of bulk and thin-film n-type GaN, using the technique of selective excitation. These fine structures exhibit thermal quenching associated with an activated behavior. We attribute these fine structures to phonons and electronic excitations of a shallow donor-deep acceptor complex, and determine its activation energy for delocalization. Our results suggest that in addition to distant donor-acceptor pairs, the yellow luminescence can also involve emission complexes of shallow donors and deep acceptors. © 1999 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/62744||ISSN:||00036951|
|Appears in Collections:||Staff Publications|
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