Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/62732
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dc.titleScaling Parameter Dependent Drain Induced Barrier Lowering Effect in Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor Field Effect Transistor
dc.contributor.authorSamudra, G.
dc.contributor.authorRajendran, K.
dc.date.accessioned2014-06-17T06:54:15Z
dc.date.available2014-06-17T06:54:15Z
dc.date.issued1999-04-01
dc.identifier.citationSamudra, G.,Rajendran, K. (1999-04-01). Scaling Parameter Dependent Drain Induced Barrier Lowering Effect in Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor Field Effect Transistor. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 38 (4 PART 2) : 349-352. ScholarBank@NUS Repository.
dc.identifier.issn00214922
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/62732
dc.description.abstractA simple model equation to study the effect of drain induced barrier lowering (DIBL) parameters on device performance for a double-gate (DG) silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistor (MOSFET) is proposed. This model equation is used to study the influence of various device parameters on the DIBL effect. The main conclusions drawn from the present study are that: (1) two different approaches for determining the DIBL parameter lead to the same model equation and (2) it is easier to calculate the DIBL parameter rather than extract it from the I-V plots. This model is also easy to implement in a circuit simulator. It is found that the DIBL parameter is almost inversely proportional to the channel length and directly proportional to the gate oxide and silicon thickness. It is shown that a DIBL parameter of less than 0.1 down to a gate length of 0.1 μm is possible at lower Si thicknesses.
dc.sourceScopus
dc.subjectAnalytical model
dc.subjectDeep sub-micron
dc.subjectDouble-gate
dc.subjectPoisson equation
dc.subjectSOI MOSFET
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
dc.description.volume38
dc.description.issue4 PART 2
dc.description.page349-352
dc.description.codenJAPND
dc.identifier.isiutNOT_IN_WOS
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