Please use this identifier to cite or link to this item:
Title: Properties of monolithic integration of a resonant tunneling diode and a quantum well laser
Authors: Sheng, H. 
Chun, S.-J. 
Issue Date: Sep-1994
Citation: Sheng, H., Chun, S.-J. (1994-09). Properties of monolithic integration of a resonant tunneling diode and a quantum well laser. Superlattices and Microstructures 16 (2) : 157-. ScholarBank@NUS Repository.
Abstract: An investigation of the electrical and optical characteristics of a resonant tunneling diode monolithically integrated with a quantum well laser is carried out. An analytic expression for the propagating model current is given in terms of the total spontaneous emission rate. The laser is pumped by the current emitted by the resonant tunneling diode. When the current in the laser exceeds the threshold current, laser light is produced. Since the current in the laser exhibits negative differential resistance similar in behavior to the current of a resonant tunneling diode, a bistable light output can be obtained from this new device. © 1994 Academic Press. All rights reserved.
Source Title: Superlattices and Microstructures
ISSN: 07496036
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.


checked on Feb 28, 2018

Page view(s)

checked on Apr 21, 2019

Google ScholarTM


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.