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|Title:||Properties of monolithic integration of a resonant tunneling diode and a quantum well laser||Authors:||Sheng, H.
|Issue Date:||Sep-1994||Citation:||Sheng, H., Chun, S.-J. (1994-09). Properties of monolithic integration of a resonant tunneling diode and a quantum well laser. Superlattices and Microstructures 16 (2) : 157-. ScholarBank@NUS Repository.||Abstract:||An investigation of the electrical and optical characteristics of a resonant tunneling diode monolithically integrated with a quantum well laser is carried out. An analytic expression for the propagating model current is given in terms of the total spontaneous emission rate. The laser is pumped by the current emitted by the resonant tunneling diode. When the current in the laser exceeds the threshold current, laser light is produced. Since the current in the laser exhibits negative differential resistance similar in behavior to the current of a resonant tunneling diode, a bistable light output can be obtained from this new device. © 1994 Academic Press. All rights reserved.||Source Title:||Superlattices and Microstructures||URI:||http://scholarbank.nus.edu.sg/handle/10635/62658||ISSN:||07496036|
|Appears in Collections:||Staff Publications|
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