Please use this identifier to cite or link to this item: https://doi.org/10.1109/68.265900
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dc.titlePolarization-insensitive electroabsorption in strained GaInAs/AlInAs quantum well structures
dc.contributor.authorWan, H.W.
dc.contributor.authorChong, T.C.
dc.contributor.authorChua, S.J.
dc.date.accessioned2014-06-17T06:53:11Z
dc.date.available2014-06-17T06:53:11Z
dc.date.issued1994-01
dc.identifier.citationWan, H.W., Chong, T.C., Chua, S.J. (1994-01). Polarization-insensitive electroabsorption in strained GaInAs/AlInAs quantum well structures. IEEE Photonics Technology Letters 6 (1) : 92-94. ScholarBank@NUS Repository. https://doi.org/10.1109/68.265900
dc.identifier.issn10411135
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/62630
dc.description.abstractThe polarization-dependent electroabsorption in lattice-matched and strained GaInAs/AlInAs quantum well structures is studied using photocurrent spectral measurements. The results show that the application of a biaxial tensile strain by the appropriate selection of the Ga mole fraction and the well size reduces the difference between the transition energies of the heavy and light holes due to quantization, while a compressive strain further enhances the polarization dependence.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/68.265900
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.doi10.1109/68.265900
dc.description.sourcetitleIEEE Photonics Technology Letters
dc.description.volume6
dc.description.issue1
dc.description.page92-94
dc.description.codenIPTLE
dc.identifier.isiutA1994MX80100030
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