Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/62486
Title: Noise characteristics of radio frequency sputtered amorphous silicon carbide films
Authors: Choi, W.K. 
Han, L.J.
Chua, L.G.
Issue Date: 1-Nov-1998
Citation: Choi, W.K.,Han, L.J.,Chua, L.G. (1998-11-01). Noise characteristics of radio frequency sputtered amorphous silicon carbide films. Journal of Applied Physics 84 (9) : 5057-5059. ScholarBank@NUS Repository.
Abstract: Noise measurements of radio frequency sputtered hydrogenated (a-SiC:H) and unhydrogenated (a-SiC) amorphous silicon carbide films have been carried out. Two Lorenztian component were found in the noise spectra of the a-SiC:H and a-SiC films. Discrete traps, created by the sputtering process, were suggested to be responsible for the Lorenztian spectra observed. As only a relatively small amount of hydrogenation was achieved in our a-SiC:H films, passivation of the discrete traps was therefore not significant. This accounts for the Lorenztian spectra of the a-SiC:H films. We propose that furnace annealing has reduced the discrete traps substantially so that only the 1/f noise was observed in the annealed samples. © 1998 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/62486
ISSN: 00218979
Appears in Collections:Staff Publications

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