Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/62462
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dc.titleNeutral electron trap generation and hole trapping in thin oxides under electrostatic discharge stress
dc.contributor.authorChim, W.K.
dc.contributor.authorTeh, G.L.
dc.date.accessioned2014-06-17T06:51:18Z
dc.date.available2014-06-17T06:51:18Z
dc.date.issued1998-04
dc.identifier.citationChim, W.K.,Teh, G.L. (1998-04). Neutral electron trap generation and hole trapping in thin oxides under electrostatic discharge stress. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 37 (4 SUPPL. A) : 1671-1673. ScholarBank@NUS Repository.
dc.identifier.issn00214922
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/62462
dc.description.abstractNeutral electron trap generation and hole trapping under electrostatic discharge (ESD) stressing of thin oxides are investigated. The results show that the number of neutral electron traps generated by the ESD stress has an empirical power-law relation to the charge injected during ESD stress. Hole trapping is also shown to be linearly related to neutral electron trap generation, the slope of the straight line in a plot of the two quantities against each other being close to unity. This suggests that the hole traps and neutral electron traps originate from the same mechanism under ESD stress.
dc.sourceScopus
dc.subjectC-V measurement
dc.subjectElectron trap
dc.subjectElectrostatic discharge
dc.subjectHole trap
dc.subjectMOS capacitor
dc.subjectNeutral electron trap
dc.subjectOxide reliability
dc.subjectThin oxide
dc.subjectTransmission line pulsing
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
dc.description.volume37
dc.description.issue4 SUPPL. A
dc.description.page1671-1673
dc.description.codenJAPND
dc.identifier.isiutNOT_IN_WOS
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