Please use this identifier to cite or link to this item:
|Title:||Neutral electron trap generation and hole trapping in thin oxides under electrostatic discharge stress||Authors:||Chim, W.K.
Neutral electron trap
Transmission line pulsing
|Issue Date:||Apr-1998||Citation:||Chim, W.K.,Teh, G.L. (1998-04). Neutral electron trap generation and hole trapping in thin oxides under electrostatic discharge stress. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 37 (4 SUPPL. A) : 1671-1673. ScholarBank@NUS Repository.||Abstract:||Neutral electron trap generation and hole trapping under electrostatic discharge (ESD) stressing of thin oxides are investigated. The results show that the number of neutral electron traps generated by the ESD stress has an empirical power-law relation to the charge injected during ESD stress. Hole trapping is also shown to be linearly related to neutral electron trap generation, the slope of the straight line in a plot of the two quantities against each other being close to unity. This suggests that the hole traps and neutral electron traps originate from the same mechanism under ESD stress.||Source Title:||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers||URI:||http://scholarbank.nus.edu.sg/handle/10635/62462||ISSN:||00214922|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jun 29, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.