Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/62459
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dc.titleNegative bias temperature instability on plasma-nitrided silicon dioxide film
dc.contributor.authorAng, C.-H.
dc.contributor.authorLek, C.-M.
dc.contributor.authorTan, S.-S.
dc.contributor.authorCho, B.-J.
dc.contributor.authorChen, T.
dc.contributor.authorLin, W.
dc.contributor.authorZhen, J.-G.
dc.date.accessioned2014-06-17T06:51:16Z
dc.date.available2014-06-17T06:51:16Z
dc.date.issued2002-03-15
dc.identifier.citationAng, C.-H.,Lek, C.-M.,Tan, S.-S.,Cho, B.-J.,Chen, T.,Lin, W.,Zhen, J.-G. (2002-03-15). Negative bias temperature instability on plasma-nitrided silicon dioxide film. Japanese Journal of Applied Physics, Part 2: Letters 41 (3 B) : L314-L316. ScholarBank@NUS Repository.
dc.identifier.issn00214922
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/62459
dc.description.abstractThe behavior of negative-bias-temperature-instability (NBTI) on ultra-thin plasma-nitrided silicon dioxide films (1.8 and 2.6 nm) has been investigated and compared with conventional thermal nitridation. Plasma-nitrided oxides shows more resistance to NBTI, as compared to thermal-nitrided oxides. This is attributed to the fact that plasma nitridation incorporates the nitrogen at the top oxide surface, thus mitigating the undesirable nitrogen-enhanced NBTI effect. Additionally, the degradation mechanism of NBTI is found to be insensitive to the nitridation process, nitrogen concentration and boron penetration.
dc.sourceScopus
dc.subjectInterface trap
dc.subjectMOS
dc.subjectNegative-bias-temperature-instability
dc.subjectThin oxide
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleJapanese Journal of Applied Physics, Part 2: Letters
dc.description.volume41
dc.description.issue3 B
dc.description.pageL314-L316
dc.description.codenJAPLD
dc.identifier.isiutNOT_IN_WOS
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