Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/62454
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dc.titleNanostructure fabrication using pulsed lasers in combination with a scanning tunneling microscope: Mechanism investigation
dc.contributor.authorLu, Y.F.
dc.contributor.authorMai, Z.H.
dc.contributor.authorZheng, Y.W.
dc.contributor.authorSong, W.D.
dc.date.accessioned2014-06-17T06:51:13Z
dc.date.available2014-06-17T06:51:13Z
dc.date.issued2000-02-28
dc.identifier.citationLu, Y.F.,Mai, Z.H.,Zheng, Y.W.,Song, W.D. (2000-02-28). Nanostructure fabrication using pulsed lasers in combination with a scanning tunneling microscope: Mechanism investigation. Applied Physics Letters 76 (9) : 1200-1202. ScholarBank@NUS Repository.
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/62454
dc.description.abstractNanostructure fabrication using lasers in combination with a scanning tunneling microscope has been reported in the past several years. Different mechanisms have been discussed for the formation of these nanostructures. However, they are controversial. In this study, we investigated the mechanism of nanostructure fabrication on both gold films and hydrogen-passivated Ge surfaces. Current-distance curves for a gold film and for an H-passivated Ge surface under an electrochemically etched tungsten tip were measured to determine the tip-sample distance. An analytical model was proposed to explain different mechanisms for nanostructure fabrication on gold films and on H-passivated Ge surfaces. Thermal expansion of the tip under laser irradiation was calculated. With comparison between the tip-sample distance and the thermal expansion of the tip, we can determine whether the mechanism is based on optical enhancement or on thermal mechanical indentation. © 2000 American Institute of Physics.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.contributor.departmentDATA STORAGE INSTITUTE
dc.description.sourcetitleApplied Physics Letters
dc.description.volume76
dc.description.issue9
dc.description.page1200-1202
dc.description.codenAPPLA
dc.identifier.isiutNOT_IN_WOS
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