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|Title:||Modelling of a resonant tunnelling hot electron transistor||Authors:||Sheng, H.
|Issue Date:||1993||Citation:||Sheng, H., Chua, S.-J. (1993). Modelling of a resonant tunnelling hot electron transistor. Semiconductor Science and Technology 8 (8) : 1590-1595. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/8/8/017||Abstract:||A semiclassical model of a resonant tunnelling hot electron transistor (RHET) is proposed. The model includes quantum interference and multiple scattering by means of a correlation function and mean free path. The DC properties of a RHET are calculated and analysed. The results show that the maximum common-emitter current gain of a RHET can be achieved by modulating the base width and barrier height of the emitter resonant tunnelling structure.||Source Title:||Semiconductor Science and Technology||URI:||http://scholarbank.nus.edu.sg/handle/10635/62430||ISSN:||02681242||DOI:||10.1088/0268-1242/8/8/017|
|Appears in Collections:||Staff Publications|
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