Please use this identifier to cite or link to this item:
Title: Ion-assisted pulsed laser deposition of aluminum nitride thin films
Authors: Lu, Y.F. 
Ren, Z.M.
Chong, T.C. 
Cheong, B.A.
Chow, S.K.
Wang, J.P.
Issue Date: Feb-2000
Citation: Lu, Y.F.,Ren, Z.M.,Chong, T.C.,Cheong, B.A.,Chow, S.K.,Wang, J.P. (2000-02). Ion-assisted pulsed laser deposition of aluminum nitride thin films. Journal of Applied Physics 87 (3) : 1540-1542. ScholarBank@NUS Repository.
Abstract: Aluminum nitride (AlN) thin films were deposited by nitrogen-ion-assisted pulsed laser ablation of an AlN target. A KrF excimer laser with a pulse duration of 23 ns and a wavelength of 248 nm was used as a light source for the ablation. A nitrogen ion beam with energies in a range of 200-800 eV is used to assist the deposition. The nitrogen ion implantation can compensate the possible loss of nitrogen species in the ablated plasma and can effectively assist the deposition by providing energetic nitrogen ions. Raman and Fourier transform infrared spectroscopy measurements were used to characterize the deposited thin films. The influences of the substrate temperature and the ion energy on the electronic and structural properties of the deposited thin films were studied. © 2000 American Institute of Physics.
Source Title: Journal of Applied Physics
ISSN: 00218979
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

checked on Jan 20, 2022

Google ScholarTM


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.