Interdigitated contact semiconductor laser as optoelectronic 'AND' gate

Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/62345

DC Field	Value
dc.title	Interdigitated contact semiconductor laser as optoelectronic 'AND' gate
dc.contributor.author	Chua, S.J.
dc.contributor.author	Lim, S.H.
dc.contributor.author	Kanhere, R.
dc.contributor.author	Tua, G.F.
dc.date.accessioned	2014-06-17T06:50:02Z
dc.date.available	2014-06-17T06:50:02Z
dc.date.issued	1991-01-01
dc.identifier.citation	Chua, S.J.,Lim, S.H.,Kanhere, R.,Tua, G.F. (1991-01-01). Interdigitated contact semiconductor laser as optoelectronic 'AND' gate. Electronics Letters 27 (21) : 1963-1964. ScholarBank@NUS Repository.
dc.identifier.issn	00135194
dc.identifier.uri	http://scholarbank.nus.edu.sg/handle/10635/62345
dc.description.abstract	Semiconductor lasers with interdigitated contacts have been successfully fabricated that are capable of achieving new functionalities. By differential current pumping, two sets of light-current characteristics can be formed with threshold current linearly dependent on the length ratio of unpumped to pumped regions. The device can function as an optoelectronic AND gate.
dc.source	Scopus
dc.type	Article
dc.contributor.department	ELECTRICAL ENGINEERING
dc.description.sourcetitle	Electronics Letters
dc.description.volume	27
dc.description.issue	21
dc.description.page	1963-1964
dc.description.coden	ELLEA
dc.identifier.isiut	NOT_IN_WOS
Appears in Collections:	Staff Publications

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