Improved Chalmers model for a GaAs MESFET

Please use this identifier to cite or link to this item: https://doi.org/10.1002/(SICI)1098-2760(20000305)24:5<311

Title:	Improved Chalmers model for a GaAs MESFET
Authors:	Xiao, Q. Ooi, B.L. Ma, J.
Issue Date:	5-Mar-2000
Citation:	Xiao, Q.,Ooi, B.L.,Ma, J. (2000-03-05). Improved Chalmers model for a GaAs MESFET. Microwave and Optical Technology Letters 24 (5) : 311-316. ScholarBank@NUS Repository. https://doi.org/10.1002/(SICI)1098-2760(20000305)24:5<311
Abstract:	An improved Chalmers large-signal model for a GaAs MESFET transistor is proposed. A commercially packaged high-power MESFET transistor (Fujitsu FLC103WG) is adopted for the extraction. Both hot and cold condition measurements and a pulsed I/V measurement are performed to derive the model. For the verification of the model, a simple single-stage class-AB amplifier is subsequently built. The simulation and measurement results of the intermodulation distortion of this amplifier agree excellently.
Source Title:	Microwave and Optical Technology Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/62309
ISSN:	08952477
DOI:	10.1002/(SICI)1098-2760(20000305)24:5<311
Appears in Collections:	Staff Publications

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