Please use this identifier to cite or link to this item: https://doi.org/10.1002/(SICI)1098-2760(20000305)24:5<311
DC FieldValue
dc.titleImproved Chalmers model for a GaAs MESFET
dc.contributor.authorXiao, Q.
dc.contributor.authorOoi, B.L.
dc.contributor.authorMa, J.
dc.date.accessioned2014-06-17T06:49:39Z
dc.date.available2014-06-17T06:49:39Z
dc.date.issued2000-03-05
dc.identifier.citationXiao, Q.,Ooi, B.L.,Ma, J. (2000-03-05). Improved Chalmers model for a GaAs MESFET. Microwave and Optical Technology Letters 24 (5) : 311-316. ScholarBank@NUS Repository. <a href="https://doi.org/10.1002/(SICI)1098-2760(20000305)24:5<311" target="_blank">https://doi.org/10.1002/(SICI)1098-2760(20000305)24:5<311</a>
dc.identifier.issn08952477
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/62309
dc.description.abstractAn improved Chalmers large-signal model for a GaAs MESFET transistor is proposed. A commercially packaged high-power MESFET transistor (Fujitsu FLC103WG) is adopted for the extraction. Both hot and cold condition measurements and a pulsed I/V measurement are performed to derive the model. For the verification of the model, a simple single-stage class-AB amplifier is subsequently built. The simulation and measurement results of the intermodulation distortion of this amplifier agree excellently.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1002/(SICI)1098-2760(20000305)24:5<311
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.doi10.1002/(SICI)1098-2760(20000305)24:5<311
dc.description.sourcetitleMicrowave and Optical Technology Letters
dc.description.volume24
dc.description.issue5
dc.description.page311-316
dc.description.codenMOTLE
dc.identifier.isiutNOT_IN_WOS
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