Please use this identifier to cite or link to this item:
|Title:||Impact ionizing electroluminescence of a double barrier structure||Authors:||Sheng, H.
|Issue Date:||Nov-1994||Citation:||Sheng, H., Chua, S.-J. (1994-11). Impact ionizing electroluminescence of a double barrier structure. Optical and Quantum Electronics 26 (11) : 1033-1040. ScholarBank@NUS Repository.||Abstract:||The impact ionizing electroluminescence model of a unipolar double barrier structure has been developed. The electron density in the quantum well and the hole density generated in the collector region are based on electron current. The electroluminescence results from direct radiative recombination between the electrons and holes in the quantum well. The results show that a light on-off ratio of the electroluminescence can be obtained. © 1994 Chapman & Hall.||Source Title:||Optical and Quantum Electronics||URI:||http://scholarbank.nus.edu.sg/handle/10635/62304||ISSN:||03068919|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
WEB OF SCIENCETM
checked on Oct 6, 2021
checked on Jan 13, 2022
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.