Please use this identifier to cite or link to this item: https://doi.org/10.1109/55.823578
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dc.titleHot-carrier degradation mechanism in narrow- and wide-channel n-MOSFET's with recessed LOCOS isolation structure
dc.contributor.authorYue, J.M.P.
dc.contributor.authorChim, W.K.
dc.contributor.authorCho, B.J.
dc.contributor.authorChan, D.S.H.
dc.contributor.authorQin, W.H.
dc.contributor.authorKim, Y.-B.
dc.contributor.authorJang, S.-A.
dc.contributor.authorYeo, I.-S.
dc.date.accessioned2014-06-17T06:49:27Z
dc.date.available2014-06-17T06:49:27Z
dc.date.issued2000-03
dc.identifier.citationYue, J.M.P.,Chim, W.K.,Cho, B.J.,Chan, D.S.H.,Qin, W.H.,Kim, Y.-B.,Jang, S.-A.,Yeo, I.-S. (2000-03). Hot-carrier degradation mechanism in narrow- and wide-channel n-MOSFET's with recessed LOCOS isolation structure. IEEE Electron Device Letters 21 (3) : 130-132. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/55.823578" target="_blank">https://doi.org/10.1109/55.823578</a>
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/62290
dc.description.abstractNarrow-channel n-MOSFET's with recessed LOCOS (R-LOCOS) isolation structure exhibits less hot carrier-induced degradation than wide-channel n-MOSFET's, but the degradation mechanism of both devices is the same. This new finding is explained by the fact that in deep submicron MOSFET's with ultra-thin gate oxide, the dominant factor deciding the degradation behavior in narrow- and wide-channel devices is the vertical electric field effect rather than the mechanical stress effect.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/55.823578
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.doi10.1109/55.823578
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume21
dc.description.issue3
dc.description.page130-132
dc.description.codenEDLED
dc.identifier.isiutNOT_IN_WOS
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