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|Title:||GaAs FET large-signal model for high power amplifier||Authors:||Ma, J.
|Issue Date:||1999||Citation:||Ma, J.,Xiao, Q.,Ooi, B.L.,Zhou, X.D.,Chew, S.T. (1999). GaAs FET large-signal model for high power amplifier. Asia-Pacific Microwave Conference Proceedings, APMC 3 : 642-645. ScholarBank@NUS Repository.||Abstract:||A new large signal model of GaAs MESFET transistor is proposed. A commercial packaged high power MESFET transistor (Fujitsu FLC103WG) is adopted for the extraction. Both the hot and cold condition measurements and the pulsed 1/V measurement are performed to derive the model. A simple single-stage class-AB amplifier is subsequently built so as to verify the derived model. The simulation and measurement results of the intermodulation distortion of this amplifier are compared.||Source Title:||Asia-Pacific Microwave Conference Proceedings, APMC||URI:||http://scholarbank.nus.edu.sg/handle/10635/62240|
|Appears in Collections:||Staff Publications|
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