Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/62181
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dc.titleFailure analysis of integrated devices by Scanning Thermal Microscopy (SThM)
dc.contributor.authorFiege, G.B.M.
dc.contributor.authorFeige, V.
dc.contributor.authorPhang, J.C.H.
dc.contributor.authorMaywald, M.
dc.contributor.authorGörlich, S.
dc.contributor.authorBalk, L.J.
dc.date.accessioned2014-06-17T06:48:16Z
dc.date.available2014-06-17T06:48:16Z
dc.date.issued1998
dc.identifier.citationFiege, G.B.M.,Feige, V.,Phang, J.C.H.,Maywald, M.,Görlich, S.,Balk, L.J. (1998). Failure analysis of integrated devices by Scanning Thermal Microscopy (SThM). Microelectronics Reliability 38 (6-8) : 957-961. ScholarBank@NUS Repository.
dc.identifier.issn00262714
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/62181
dc.description.abstractHigh power densities dissipated in smaller and faster devices are leading to major thermal problems of semiconductor devices. The resulting local heat dissipation can induce deleterious effects like accelerated degradation or the destruction of the integrated circuits. Due to the shrinking feature sizes of modern devices and the small local extension of electrical failures the exact localization of these defects using established thermal failure analysis techniques like infrared thermometry becoming more and more difficult. Temperature measurements on passivated electronic devices with a sensitivity of 5 millikelvin by the use of a scanning thermal microscope (SThM) in contrast demonstrate the possibilities to use this system as a tool for failure analysis. Hot spot imaging with a spatial resolution of less than 150 nm, investigations on the backside of ULSI devices as well as a comparison with complementary established analysis techniques are presented. © 1998 Elsevier Science Ltd. All rights reserved.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleMicroelectronics Reliability
dc.description.volume38
dc.description.issue6-8
dc.description.page957-961
dc.description.codenMCRLA
dc.identifier.isiutNOT_IN_WOS
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