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|Title:||Fabrication of ZnSe/ZnS quantum wires using high index GaP substrates||Authors:||Tomasini, P.
|Issue Date:||1-Dec-1996||Citation:||Tomasini, P.,Arai, K.,Wu, Y.H.,Yao, T. (1996-12-01). Fabrication of ZnSe/ZnS quantum wires using high index GaP substrates. Journal of Applied Physics 80 (11) : 6539-6543. ScholarBank@NUS Repository.||Abstract:||ZnSe/ZnS quantum wires and quantum dots were grown on unpatterned substrates by molecular beam epitaxy. Several substrate orientations were compared. These structures exhibited a strong luminescence. A linear crystallographic dependence of the photoluminescence peak energy was observed when comparing structures grown in the same experimental conditions. All samples exhibited also strong zero-dimensional-one-dimensional confinement signatures. An empirical analysis is provided illuminating the issue involved by the redshift. © 1996 American Institute of Physics.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/62177||ISSN:||00218979|
|Appears in Collections:||Staff Publications|
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