Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.125579
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dc.titleEnhancement of hot-carrier injection resistance for deep submicron transistor gate dielectric with a powered solenoid
dc.contributor.authorCha, C.-L.
dc.contributor.authorTee, K.-C.
dc.contributor.authorChor, E.-F.
dc.contributor.authorGong, H.
dc.contributor.authorPrasad, K.
dc.contributor.authorBourdillon, A.J.
dc.contributor.authorSee, A.
dc.contributor.authorChan, L.
dc.contributor.authorLee, M.M.-O.
dc.date.accessioned2014-06-17T06:47:50Z
dc.date.available2014-06-17T06:47:50Z
dc.date.issued1999
dc.identifier.citationCha, C.-L., Tee, K.-C., Chor, E.-F., Gong, H., Prasad, K., Bourdillon, A.J., See, A., Chan, L., Lee, M.M.-O. (1999). Enhancement of hot-carrier injection resistance for deep submicron transistor gate dielectric with a powered solenoid. Applied Physics Letters 75 (26) : 4192-4194. ScholarBank@NUS Repository. https://doi.org/10.1063/1.125579
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/62141
dc.description.abstractThe operational reliability of ultrathin gate dielectrics in forthcoming metal-oxide-semiconductor field-effect transistors (MOSFETs) will be impaired if there is the occurrence of hot-carrier injection (HCI) into the gate across the gate dielectric. In this work, a method is proposed to mellow the undesired effects incurred by HCI in a n-type MOSFET (NMOSFET) via a reduction in its frequency. The method involves the powering of a polycrystalline silicon (polysilicon) solenoid at the same time when the gate and drain of transistors are powered. The localized magnetic field generated from the solenoid can impose a downward force (Hall effect) to counteract or compensate the upward driving force exerted on the energetic electrons reaching the drain by the applied gate voltage. Fewer electrons will be trapped and the quality, reliability, and lifetime of the device will improve as a consequence. © 1999 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.125579
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE
dc.contributor.departmentPHYSICS
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.doi10.1063/1.125579
dc.description.sourcetitleApplied Physics Letters
dc.description.volume75
dc.description.issue26
dc.description.page4192-4194
dc.description.codenAPPLA
dc.identifier.isiut000084504700049
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