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|Title:||Enhancement of electroluminescence properties in delta-doped quantum well of bipolar resonant tunneling diode||Authors:||Sheng, Hanyu
|Issue Date:||1994||Citation:||Sheng, Hanyu,Chua, Soo-Jin (1994). Enhancement of electroluminescence properties in delta-doped quantum well of bipolar resonant tunneling diode. Proceedings of SPIE - The International Society for Optical Engineering 2321 : 104-106. ScholarBank@NUS Repository.||Abstract:||An analytical model of δ-doped quantum well is developed. The results show that by using δ-doped quantum well structure, the area densities of the electrons and holes in the conduction and valence bands respectively can be increased by 4 orders of magnitudes compared with the n-i-p structure. Therefore the electroluminescence enhancement can be expected for the bipolar resonant tunneling diode of δ-doped quantum well.||Source Title:||Proceedings of SPIE - The International Society for Optical Engineering||URI:||http://scholarbank.nus.edu.sg/handle/10635/62139||ISBN:||0819416525||ISSN:||0277786X|
|Appears in Collections:||Staff Publications|
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