Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/62138
DC Field | Value | |
---|---|---|
dc.title | Enhanced optical emission from GaN films grown on a silicon substrate | |
dc.contributor.author | Zhang, X. | |
dc.contributor.author | Chua, S.-J. | |
dc.contributor.author | Li, P. | |
dc.contributor.author | Chong, K.-B. | |
dc.contributor.author | Feng, Z.-C. | |
dc.date.accessioned | 2014-06-17T06:47:48Z | |
dc.date.available | 2014-06-17T06:47:48Z | |
dc.date.issued | 1999-04-05 | |
dc.identifier.citation | Zhang, X.,Chua, S.-J.,Li, P.,Chong, K.-B.,Feng, Z.-C. (1999-04-05). Enhanced optical emission from GaN films grown on a silicon substrate. Applied Physics Letters 74 (14) : 1984-1986. ScholarBank@NUS Repository. | |
dc.identifier.issn | 00036951 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/62138 | |
dc.description.abstract | GaN films were grown on a silicon wafer by metallorganic chemical vapor deposition. The substrate was composed of composite intermediate layers of ultrathin amorphous silicon films and a GaN/AlGaN multilayered buffer. The enhanced optical emission characteristics and crystallinity of the samples were determined by photoluminescence and X-ray diffraction spectroscopy. | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | PHYSICS | |
dc.contributor.department | ELECTRICAL ENGINEERING | |
dc.description.sourcetitle | Applied Physics Letters | |
dc.description.volume | 74 | |
dc.description.issue | 14 | |
dc.description.page | 1984-1986 | |
dc.description.coden | APPLA | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
Show simple item record
Files in This Item:
There are no files associated with this item.
Google ScholarTM
Check
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.