Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/62056
DC FieldValue
dc.titleDistribution of photoresist over GaAs mesa structures
dc.contributor.authorRamam, A.
dc.contributor.authorChua, S.J.
dc.date.accessioned2014-06-17T06:46:57Z
dc.date.available2014-06-17T06:46:57Z
dc.date.issued1994-02
dc.identifier.citationRamam, A.,Chua, S.J. (1994-02). Distribution of photoresist over GaAs mesa structures. Journal of the Electrochemical Society 141 (2) : 576-578. ScholarBank@NUS Repository.
dc.identifier.issn00134651
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/62056
dc.description.abstractPhotoresist distribution and topology over GaAs mesa structures and their dependence on inter-mesa separations are studied and analyzed for different types of resists and spin parameters. The cross-sectional observations give insight into the flow of photoresist over mesa edges and in identifying the difficult region as `mesa edge' for pattern openings. These observations are important where small geometry patterns are required to be opened near to the mesa edge and for interconnecting metal lines running down the mesa. Experimental parameters have been identified for achieving specific GaAs mesa/resist profile combination.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleJournal of the Electrochemical Society
dc.description.volume141
dc.description.issue2
dc.description.page576-578
dc.description.codenJESOA
dc.identifier.isiutNOT_IN_WOS
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