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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/62028
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dc.titleDetermination of minority carrier diffusion lengths in semiconductor wafers with non-uniform carrier lifetimes by the surface photovoltage technique
dc.contributor.authorTan, L.S.
dc.contributor.authorHuynh, F.N.L.
dc.date.accessioned2014-06-17T06:46:38Z
dc.date.available2014-06-17T06:46:38Z
dc.date.issued1999
dc.identifier.citationTan, L.S.,Huynh, F.N.L. (1999). Determination of minority carrier diffusion lengths in semiconductor wafers with non-uniform carrier lifetimes by the surface photovoltage technique. Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD : 318-321. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/62028
dc.description.abstractAn analytical theory of the surface photovoltage method for the determination of the minority carrier diffusion lengths in semiconductor wafers with non-uniform carrier lifetimes is presented. Values of minority carrier diffusion lengths extracted using the theory agree well with those from full numerical simulations. Experimental verification of the theory is currently in progress.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
dc.description.page318-321
dc.description.coden00268
dc.identifier.isiutNOT_IN_WOS
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