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|Title:||Design and performance of a new spectroscopic photon emission microscope system for the physical analysis of semiconductor devices||Authors:||Chan, D.S.H.
|Issue Date:||Jul-1996||Citation:||Chan, D.S.H.,Phang, J.C.H.,Chim, W.K.,Liu, Y.Y.,Tao, J.M. (1996-07). Design and performance of a new spectroscopic photon emission microscope system for the physical analysis of semiconductor devices. Review of Scientific Instruments 67 (7) : 2576-2583. ScholarBank@NUS Repository.||Abstract:||This article describes the design and performance of a new spectroscopic photon emission microscope system with panchromatic imaging and continuous wavelength spectroscopic capabilities. Very low levels of light emissions from biased devices can be detected and high resolution spectral characteristics can be analyzed because of the highly efficient light collection and transmission optics. Results shown include those metal oxide semiconductor transistors biased in saturation, forward and reverse biased p-n junctions, and oxide leakage. The potential use of the "defect fingerprinting" technique, whereby a unique spectral signature is assigned to each failure mechanism, is also discussed. © 1996 American Institute of Physics.||Source Title:||Review of Scientific Instruments||URI:||http://scholarbank.nus.edu.sg/handle/10635/62004||ISSN:||00346748|
|Appears in Collections:||Staff Publications|
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