Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/62001
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dc.titleDesign and characterisation of a single-reflection, solid-state detector with high discrimination against backscattered electrons for cathodoluminescence microscopy
dc.contributor.authorPey, K.L.
dc.contributor.authorPhang, J.C.H.
dc.contributor.authorChan, D.S.H.
dc.contributor.authorLeong, Y.K.
dc.date.accessioned2014-06-17T06:46:21Z
dc.date.available2014-06-17T06:46:21Z
dc.date.issued1996
dc.identifier.citationPey, K.L.,Phang, J.C.H.,Chan, D.S.H.,Leong, Y.K. (1996). Design and characterisation of a single-reflection, solid-state detector with high discrimination against backscattered electrons for cathodoluminescence microscopy. Scanning 18 (1) : 35-44. ScholarBank@NUS Repository.
dc.identifier.issn01610457
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/62001
dc.description.abstractA portable solid-state detector (SSD) for cathodoluminescence (CL) has been constructed and tested. The detector geometry utilises a parabolic reflector to direct light towards the solid-state detection element. The photo-sensitive area of the solid-state photodiodes is situated at a level in line with or sightly below the top surface of the specimen to minimise the collection of backscattered electrons (BSEs) coming directly from the beam impact point. The components have been integrated into a single unit to enhance portability. In comparison with a commercial CL detection system, the new geometry shows excellent efficiency in rejecting BSE contribution during CL operation. A light collection solid angle close to 1.97π steradian is realised in this geometry, higher than other SSD-CL systems. A method for characterising CL detection system performance has been developed.
dc.sourceScopus
dc.subjectBackscattered electrons
dc.subjectCathodoluminescence
dc.subjectDetection system
dc.subjectParabolic reflector
dc.subjectSolid-state detector
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.contributor.departmentINSTITUTE OF MICROELECTRONICS
dc.description.sourcetitleScanning
dc.description.volume18
dc.description.issue1
dc.description.page35-44
dc.description.codenSCNND
dc.identifier.isiutNOT_IN_WOS
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