Please use this identifier to cite or link to this item:
|Title:||Correlation between the infrared reflectance and microstructure of thin gallium nitride films grown on silicon substrates||Authors:||Hou, Y.T.
|Issue Date:||30-May-2000||Citation:||Hou, Y.T., Feng, Z.C., Chen, J., Zhang, X., Chua, S.J., Lin, J.Y. (2000-05-30). Correlation between the infrared reflectance and microstructure of thin gallium nitride films grown on silicon substrates. Solid State Communications 115 (1) : 45-49. ScholarBank@NUS Repository. https://doi.org/10.1016/S0038-1098(00)00134-4||Abstract:||Thin gallium nitride (GaN) films grown on silicon substrates are studied by infrared reflectance (IR) spectroscopy and scanning electron microscopy (SEM). For different samples, a variation of the reststrahlen band is observed. Through a theoretical analysis using a proposed three-component effective medium model, this variation of IR spectra is attributed to the polycrystalline nature of GaN grown on silicon, as revealed by SEM measurements. A correlation between the shape of the reststrahlen band and the microstructure of the GaN film is found. It shows that IR can offer a versatile means to characterize the quality of GaN on silicon.||Source Title:||Solid State Communications||URI:||http://scholarbank.nus.edu.sg/handle/10635/61979||ISSN:||00381098||DOI:||10.1016/S0038-1098(00)00134-4|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jan 27, 2023
WEB OF SCIENCETM
checked on Jan 18, 2023
checked on Jan 26, 2023
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.