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|Title:||Correlation between the infrared reflectance and microstructure of thin gallium nitride films grown on silicon substrates||Authors:||Hou, Y.T.
|Issue Date:||30-May-2000||Citation:||Hou, Y.T., Feng, Z.C., Chen, J., Zhang, X., Chua, S.J., Lin, J.Y. (2000-05-30). Correlation between the infrared reflectance and microstructure of thin gallium nitride films grown on silicon substrates. Solid State Communications 115 (1) : 45-49. ScholarBank@NUS Repository. https://doi.org/10.1016/S0038-1098(00)00134-4||Abstract:||Thin gallium nitride (GaN) films grown on silicon substrates are studied by infrared reflectance (IR) spectroscopy and scanning electron microscopy (SEM). For different samples, a variation of the reststrahlen band is observed. Through a theoretical analysis using a proposed three-component effective medium model, this variation of IR spectra is attributed to the polycrystalline nature of GaN grown on silicon, as revealed by SEM measurements. A correlation between the shape of the reststrahlen band and the microstructure of the GaN film is found. It shows that IR can offer a versatile means to characterize the quality of GaN on silicon.||Source Title:||Solid State Communications||URI:||http://scholarbank.nus.edu.sg/handle/10635/61979||ISSN:||00381098||DOI:||10.1016/S0038-1098(00)00134-4|
|Appears in Collections:||Staff Publications|
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