Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/61934
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dc.titleCharge trapping in interpoly ONO film
dc.contributor.authorLira, K.S.
dc.contributor.authorLing, C.H.
dc.date.accessioned2014-06-17T06:45:37Z
dc.date.available2014-06-17T06:45:37Z
dc.date.issued1998
dc.identifier.citationLira, K.S.,Ling, C.H. (1998). Charge trapping in interpoly ONO film. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE : 42-46. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/61934
dc.description.abstractThe charge trapping characteristics of oxide-nitride-oxide (ONO) film in an interpoly capacitor structure has been investigated. The hole trapping characteristics are observed under constant current stress. The centroid of trapped charge is found to be localized at top oxide/nitride interface under both stress polarities. The larger hole trapping observed under negative stress correlates to a shorter electrical lifetime.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
dc.description.page42-46
dc.description.coden00267
dc.identifier.isiutNOT_IN_WOS
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