Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0022-0248(99)00705-8
DC FieldValue
dc.titleCan physical analysis aid in device characterization?
dc.contributor.authorChan, D.S.H.
dc.contributor.authorChim, W.K.
dc.contributor.authorPhang, J.C.H.
dc.contributor.authorLiu, Y.Y.
dc.contributor.authorNg, T.H.
dc.contributor.authorXiao, H.
dc.date.accessioned2014-06-17T06:45:24Z
dc.date.available2014-06-17T06:45:24Z
dc.date.issued2000-03-01
dc.identifier.citationChan, D.S.H., Chim, W.K., Phang, J.C.H., Liu, Y.Y., Ng, T.H., Xiao, H. (2000-03-01). Can physical analysis aid in device characterization?. Journal of Crystal Growth 210 (1) : 323-330. ScholarBank@NUS Repository. https://doi.org/10.1016/S0022-0248(99)00705-8
dc.identifier.issn00220248
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/61914
dc.description.abstractRecent developments in electrical characterization and physical analysis techniques have led to new benefits from their combined application, especially in the investigation of device degradation and failure analysis. Drawing from two examples, one on silicon transistor devices and the other on III-V light-emitting diodes, results will be presented to illustrate that the combined application of such techniques does introduce interesting possibilities in analyzing and understanding device degradation problems.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/S0022-0248(99)00705-8
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.doi10.1016/S0022-0248(99)00705-8
dc.description.sourcetitleJournal of Crystal Growth
dc.description.volume210
dc.description.issue1
dc.description.page323-330
dc.description.codenJCRGA
dc.identifier.isiut000085937200067
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