Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/61810
DC Field | Value | |
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dc.title | An improved analysis for the determination of trap levels in silicon from laser microwave photoconductive decay measurements | |
dc.contributor.author | Ling, C.H. | |
dc.contributor.author | Cheng, Z.Y. | |
dc.date.accessioned | 2014-06-17T06:44:14Z | |
dc.date.available | 2014-06-17T06:44:14Z | |
dc.date.issued | 1997-12-01 | |
dc.identifier.citation | Ling, C.H.,Cheng, Z.Y. (1997-12-01). An improved analysis for the determination of trap levels in silicon from laser microwave photoconductive decay measurements. Applied Physics Letters 71 (22) : 3218-3220. ScholarBank@NUS Repository. | |
dc.identifier.issn | 00036951 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/61810 | |
dc.description.abstract | Dominant trap energy levels in silicon are extracted from the temperature dependence of minority carrier recombination lifetime, observed through laser microwave photoconductive decay. A small correction is made to the Arrhenius plot by incorporating the weakly temperature-dependent term in the recombination lifetime expression, hitherto ignored. The new extraction technique is simple to implement and the results are in good agreement with published data. © 1997 American Institute of Physics. | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL ENGINEERING | |
dc.description.sourcetitle | Applied Physics Letters | |
dc.description.volume | 71 | |
dc.description.issue | 22 | |
dc.description.page | 3218-3220 | |
dc.description.coden | APPLA | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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