Please use this identifier to cite or link to this item: https://doi.org/10.1007/s00542-008-0712-2
DC FieldValue
dc.titleWafer-level BCB bonding using a thermal press for microfluidics
dc.contributor.authorZhou, X.
dc.contributor.authorVirasawmy, S.
dc.contributor.authorQuan, C.
dc.date.accessioned2014-06-17T06:38:07Z
dc.date.available2014-06-17T06:38:07Z
dc.date.issued2009-04
dc.identifier.citationZhou, X., Virasawmy, S., Quan, C. (2009-04). Wafer-level BCB bonding using a thermal press for microfluidics. Microsystem Technologies 15 (4) : 573-580. ScholarBank@NUS Repository. https://doi.org/10.1007/s00542-008-0712-2
dc.identifier.issn09467076
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/61686
dc.description.abstractBenzocyclobutene (BCB) is a thermosetting polymer that can form microfluidics and bond top and bottom layers of the microfluidics at the same time, and yields high repeatability and high bonding strength. This paper reports using photosensitive BCB to fabricate microfluidics and to bond with a thermal press for 4 in. wafers. By optimizing the parameters for pattern development and using a three-stage temperature and pressure increment BCB bonding, we realize the whole wafer glass-Si or glass-glass bonding in thermal press without any crack. The wafer-level bonding shows a bonding percentage above 70%, a tensile stress above 4.94 MPa, and a bonding repeatability over 95%. Furthermore, the bonding is compatible with thick electrode integration, that microfluidics with 380 nm thick electrodes underneath can be well-bonded. Our bonding method much reduces the cost compared with bonding BCB in a wafer bonding machine. © 2008 Springer-Verlag.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1007/s00542-008-0712-2
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentMECHANICAL ENGINEERING
dc.contributor.departmentSINGAPORE SYNCHROTRON LIGHT SOURCE
dc.description.doi10.1007/s00542-008-0712-2
dc.description.sourcetitleMicrosystem Technologies
dc.description.volume15
dc.description.issue4
dc.description.page573-580
dc.identifier.isiut000262676300011
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