Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.susc.2007.06.025
DC FieldValue
dc.titleUnderstanding nitrogen-induced effects on the performance of ultra low-k dielectric systems through ab initio simulations
dc.contributor.authorDai, L.
dc.contributor.authorTan, V.B.C.
dc.contributor.authorYang, S.-W.
dc.contributor.authorWu, P.
dc.contributor.authorChen, X.-T.
dc.date.accessioned2014-06-17T06:37:37Z
dc.date.available2014-06-17T06:37:37Z
dc.date.issued2007-08-15
dc.identifier.citationDai, L., Tan, V.B.C., Yang, S.-W., Wu, P., Chen, X.-T. (2007-08-15). Understanding nitrogen-induced effects on the performance of ultra low-k dielectric systems through ab initio simulations. Surface Science 601 (16) : 3366-3371. ScholarBank@NUS Repository. https://doi.org/10.1016/j.susc.2007.06.025
dc.identifier.issn00396028
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/61644
dc.description.abstractLarge scale ab initio molecular dynamics simulations were performed to investigate how Cu/ultra low-k systems are improved when N is incorporated into the pore-sealing layers. It was found that the high affinity of N to Ta and H gives rise to new phases that prevent H atoms from penetrating the Ta diffusion barrier layer. Consequently, the Ta layer forms organized structures with good barrier performance and electrical conductivity. Furthermore, a continuous ductile film is formed to seal the highly porous polymer dielectrics. Interfacial adhesion between the pore-sealing layer and the dielectrics is also enhanced by inter-diffusion. © 2007 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.susc.2007.06.025
dc.sourceScopus
dc.subjectab initio
dc.subjectDiffusion barrier
dc.subjectInterface
dc.subjectLow-k
dc.subjectNitrogen
dc.subjectPore-sealing
dc.typeArticle
dc.contributor.departmentMECHANICAL ENGINEERING
dc.contributor.departmentNUS NANOSCIENCE & NANOTECH INITIATIVE
dc.description.doi10.1016/j.susc.2007.06.025
dc.description.sourcetitleSurface Science
dc.description.volume601
dc.description.issue16
dc.description.page3366-3371
dc.description.codenSUSCA
dc.identifier.isiut000249282600012
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