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https://doi.org/10.1063/1.2432948
Title: | Large scale ab initio molecular dynamics simulations of hydrogen-induced degradation of Ta diffusion barriers in ultralow-k dielectric systems | Authors: | Dai, L. Tan, V.B.C. Yang, S.-W. Wu, P. Chen, X.-T. |
Issue Date: | 2007 | Citation: | Dai, L., Tan, V.B.C., Yang, S.-W., Wu, P., Chen, X.-T. (2007). Large scale ab initio molecular dynamics simulations of hydrogen-induced degradation of Ta diffusion barriers in ultralow-k dielectric systems. Applied Physics Letters 90 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2432948 | Abstract: | In ultralow- k dielectric systems, the porous dielectrics are normally sealed by a SiC film before the deposition of a Ta diffusion barrier layer. However, the Ta barrier effects are negated when the SiC films are fabricated by plasma-enhanced chemical vapor deposition (PECVD). Through large scale ab initio molecular dynamics simulations, the authors found that the barrier degradation is due to H atoms introduced during PECVD. The H impurities diffuse into and transform an otherwise dense Ta layer into a loose amorphous phase which is ineffective as a diffusion barrier. © 2007 American Institute of Physics. | Source Title: | Applied Physics Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/60630 | ISSN: | 00036951 | DOI: | 10.1063/1.2432948 |
Appears in Collections: | Staff Publications |
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