Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/58761
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dc.titleSynthesis of free standing, one dimensional, Al-SiC based functionally gradient materials using gradient slurry disintegration and deposition
dc.contributor.authorGupta, M.
dc.contributor.authorLoke, C.Y.
dc.date.accessioned2014-06-17T05:18:08Z
dc.date.available2014-06-17T05:18:08Z
dc.date.issued2000-01-15
dc.identifier.citationGupta, M.,Loke, C.Y. (2000-01-15). Synthesis of free standing, one dimensional, Al-SiC based functionally gradient materials using gradient slurry disintegration and deposition. Materials Science and Engineering A 276 (1-2) : 210-217. ScholarBank@NUS Repository.
dc.identifier.issn09215093
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/58761
dc.description.abstractIn the present study, aluminum-silicon carbide based functionally gradient materials were successfully synthesized using a new technique termed here as gradient slurry disintegration and deposition process. Gradients of SiC were successfully established using this technique for the starting silicon carbide weight percentages ranging between 15-20%. The results were confirmed using microstructural characterization techniques and microhardness measurements. The results further revealed that an increase in the weight percentage of silicon carbide particulates along the deposition direction lead to a concurrent increase in porosity, degree of clustering and microhardness while the silicon carbide-aluminum interfacial integrity remained the same. An attempt is made to interrelate the processing methodology, microstructure and microhardness results obtained in the present study. © 2000 Elsevier Science S.A.
dc.sourceScopus
dc.subjectFunctionally gradient materials
dc.subjectGradient slurry disintegration and deposition
dc.subjectMicrohardness
dc.subjectMicrostructure
dc.subjectProcessing
dc.typeArticle
dc.contributor.departmentMECHANICAL & PRODUCTION ENGINEERING
dc.description.sourcetitleMaterials Science and Engineering A
dc.description.volume276
dc.description.issue1-2
dc.description.page210-217
dc.identifier.isiutNOT_IN_WOS
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