Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/58302
DC FieldValue
dc.titleFormation of pyramids at surface of TMAH etched silicon
dc.contributor.authorChoi, W.K.
dc.contributor.authorThong, J.T.L.
dc.contributor.authorLuo, P.
dc.contributor.authorBai, Y.
dc.contributor.authorTan, C.M.
dc.contributor.authorChua, T.H.
dc.date.accessioned2014-06-17T05:13:04Z
dc.date.available2014-06-17T05:13:04Z
dc.date.issued1999-04
dc.identifier.citationChoi, W.K.,Thong, J.T.L.,Luo, P.,Bai, Y.,Tan, C.M.,Chua, T.H. (1999-04). Formation of pyramids at surface of TMAH etched silicon. Applied Surface Science 144-145 (0) : 472-475. ScholarBank@NUS Repository.
dc.identifier.issn01694332
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/58302
dc.description.abstractAn investigation on the influence of etchant concentration and ambient temperature on the formation of pyramids arising from the TMAH etching of silicon has been carried out. The number and size of the pyramids were used as parameters for the investigation. From the results obtained from this study, we are able to explain the influence of the TMAH concentration and ambient temperature on the changes occurring at the silicon surface satisfactorily using the pH theory. © 1999 Elsevier Science B.V. All rights reserved.
dc.sourceScopus
dc.subjectEtching parameters
dc.subjectPyramids
dc.subjectSilicon
dc.subjectTetramethylammonium hydroxide (TMAH)
dc.typeArticle
dc.contributor.departmentMECHANICAL & PRODUCTION ENGINEERING
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleApplied Surface Science
dc.description.volume144-145
dc.description.issue0
dc.description.page472-475
dc.description.codenASUSE
dc.identifier.isiutNOT_IN_WOS
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

Page view(s)

108
checked on Dec 2, 2021

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.