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Please use this identifier to cite or link to this item: https://doi.org/10.1002/1521-396X(200111)188:1<329
DC FieldValue
dc.titleVisible-Blind Metal-Semiconductor-Metal Ultra-Violet Detectors Based on Epitaxially Laterally Overgrown Gallium Nitride
dc.contributor.authorGu, W.
dc.contributor.authorChua, S.J.
dc.contributor.authorZhang, X.H.
dc.contributor.authorHao, M.S.
dc.contributor.authorZhang, J.
dc.contributor.authorWang, W.
dc.contributor.authorLiu, W.
dc.date.accessioned2014-06-17T03:10:10Z
dc.date.available2014-06-17T03:10:10Z
dc.date.issued2001-11
dc.identifier.citationGu, W.,Chua, S.J.,Zhang, X.H.,Hao, M.S.,Zhang, J.,Wang, W.,Liu, W. (2001-11). Visible-Blind Metal-Semiconductor-Metal Ultra-Violet Detectors Based on Epitaxially Laterally Overgrown Gallium Nitride. Physica Status Solidi (A) Applied Research 188 (1) : 329-331. ScholarBank@NUS Repository. <a href="https://doi.org/10.1002/1521-396X(200111)188:1<329" target="_blank">https://doi.org/10.1002/1521-396X(200111)188:1<329</a>
dc.identifier.issn00318965
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/57785
dc.description.abstractVisible-blind metal-semiconductor-metal ultra-violet detectors based on epitaxially laterally overgrown gallium nitride were fabricated. I-V measurement showed good Schottky contact and very low dark current, which was only 723 nA at 10 V and 544.8 pA at 3 V. The photocurrent spectrum showed a cut-off wavelength at 366 nm and an ultraviolet/visible ratio of three orders of magnitude. The responsivity is 0.05 A/W at 5 V bias.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1002/1521-396X(200111)188:1<329
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1002/1521-396X(200111)188:1<329
dc.description.sourcetitlePhysica Status Solidi (A) Applied Research
dc.description.volume188
dc.description.issue1
dc.description.page329-331
dc.description.codenPSSAB
dc.identifier.isiutNOT_IN_WOS
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