Please use this identifier to cite or link to this item:
https://doi.org/10.1109/MCD.2005.1388766
DC Field | Value | |
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dc.title | The power of functional scaling: Beyond the power consumption challenge and the scaling roadmap | |
dc.contributor.author | Chin, A. | |
dc.contributor.author | McAlister, S.P. | |
dc.date.accessioned | 2014-06-17T03:08:25Z | |
dc.date.available | 2014-06-17T03:08:25Z | |
dc.date.issued | 2005-01 | |
dc.identifier.citation | Chin, A., McAlister, S.P. (2005-01). The power of functional scaling: Beyond the power consumption challenge and the scaling roadmap. IEEE Circuits and Devices Magazine 21 (1) : 27-35. ScholarBank@NUS Repository. https://doi.org/10.1109/MCD.2005.1388766 | |
dc.identifier.issn | 87553996 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/57632 | |
dc.description.abstract | The increases in the densities of devices and their functionality in circuits are making the issue of power dissipation, both static and dynamic, a serious constraint to future scaling advances. 3-D integration of novel Ge-based devices with standard Si devices is shown to provide potential ways to address the dc and ac power consumption issues in advanced ICs. Advantages of this scheme include low processing temperature and excellent lattice-match with GaAs. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/MCD.2005.1388766 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/MCD.2005.1388766 | |
dc.description.sourcetitle | IEEE Circuits and Devices Magazine | |
dc.description.volume | 21 | |
dc.description.issue | 1 | |
dc.description.page | 27-35 | |
dc.description.coden | ICDME | |
dc.identifier.isiut | 000227072100004 | |
Appears in Collections: | Staff Publications |
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