The power of functional scaling: Beyond the power consumption challenge and the scaling roadmap

Abstract

The increases in the densities of devices and their functionality in circuits are making the issue of power dissipation, both static and dynamic, a serious constraint to future scaling advances. 3-D integration of novel Ge-based devices with standard Si devices is shown to provide potential ways to address the dc and ac power consumption issues in advanced ICs. Advantages of this scheme include low processing temperature and excellent lattice-match with GaAs.