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Title: Surfactant effect of arsenic doping on modification of ZnO (0001) growth kinetics
Authors: Ye, J.D.
Tan, S.T.
Pannirselvam, S.
Choy, S.F.
Sun, X.W.
Lo, G.Q.
Teo, K.L. 
Issue Date: 2009
Citation: Ye, J.D., Tan, S.T., Pannirselvam, S., Choy, S.F., Sun, X.W., Lo, G.Q., Teo, K.L. (2009). Surfactant effect of arsenic doping on modification of ZnO (0001) growth kinetics. Applied Physics Letters 95 (10) : -. ScholarBank@NUS Repository.
Abstract: The effect of arsenic doping on the growth kinetics of ZnO during metalorganic vapor phase epitaxy has been investigated. Arsenic was found to segregate to the growth surface and facilitate layer-by-layer growth. Such surfactant enhances the lateral expansion of the terraces preferential along [1̄1̄20] direction and also reduces the screw lattice distortion. Arsenic is expected to reduce the total surface energy and diffusion barrier of oxygen adatoms, hence producing Zn-rich surface condition on the growth front, in which two-dimensional growth is thermodynamically and kinetically favored. The origin of tiny hexagonal pits formed on the wide terrace is discussed in terms of the modified step-bunching mechanism. © 2009 American Institute of Physics.
Source Title: Applied Physics Letters
ISSN: 00036951
DOI: 10.1063/1.3226105
Appears in Collections:Staff Publications

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