Please use this identifier to cite or link to this item:
|Title:||Study of leakage mechanisms of the copper/Black Diamond™ damascene process||Authors:||Yiang, K.Y.
|Issue Date:||Sep-2004||Citation:||Yiang, K.Y., Guo, Q., Yoo, W.J., Krishnamoorthy, A. (2004-09). Study of leakage mechanisms of the copper/Black Diamond™ damascene process. Thin Solid Films 462-463 (SPEC. ISS.) : 330-333. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2004.05.051||Abstract:||The conduction mechanisms in as-deposited Black Diamond™ film and integrated Cu/Black Diamond™ damascene structures were investigated. The as-deposited film exhibits Schottky emission from low up to breakdown fields. In the integrated structure, however, Schottky emission dominates at low fields (0.2 to 1.4 MV/cm) and Poole-Frenkel emission dominates at high fields (>1.4 MV/cm). The manifestation of Poole-Frenkel emission in the integrated structure and its absence in the as-deposited film indicate the generation of bulk dielectric traps during the damascene fabrication process. © 2004 Elsevier B.V. All rights reserved.||Source Title:||Thin Solid Films||URI:||http://scholarbank.nus.edu.sg/handle/10635/57538||ISSN:||00406090||DOI:||10.1016/j.tsf.2004.05.051|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 7, 2019
WEB OF SCIENCETM
checked on Nov 28, 2019
checked on Dec 1, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.