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|Title:||Spin-polarized current generated by magneto-electrical gating||Authors:||Ma, M.
|Keywords:||Non-equilibrium Greens function
Single electron tunneling
Spin polarized current
|Issue Date:||Aug-2012||Citation:||Ma, M., Jalil, M.B.A., Tan, S.G. (2012-08). Spin-polarized current generated by magneto-electrical gating. Journal of Magnetism and Magnetic Materials 324 (15) : 2392-2396. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jmmm.2012.03.011||Abstract:||We theoretically study spin-polarized current through a single electron tunneling transistor (SETT), in which a quantum dot (QD) is coupled to non-magnetic source and drain electrodes via tunnel junctions, and gated by a ferromagnetic (FM) electrode. The I-V characteristics of the device are investigated for both spin and charge currents, based on the non-equilibrium Greens function formalism. The FM electrode generates a magnetic field, which causes a Zeeman spin-splitting of the energy levels in the QD. By tuning the size of the Zeeman splitting and the source-drain bias, a fully spin-polarized current is generated. Additionally, by modulating the electrical gate bias, one can effect a complete switch of the polarization of the tunneling current from spin-up to spin-down current, or vice versa. © 2012 Elsevier B.V. All rights reserved.||Source Title:||Journal of Magnetism and Magnetic Materials||URI:||http://scholarbank.nus.edu.sg/handle/10635/57495||ISSN:||03048853||DOI:||10.1016/j.jmmm.2012.03.011|
|Appears in Collections:||Staff Publications|
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