Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3410999
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dc.titleSpin-flip effects in a ferromagnetic/normal-metal island/ferromagnetic double tunnel junction system
dc.contributor.authorMa, M.J.
dc.contributor.authorJalil, M.B.A.
dc.contributor.authorTan, S.G.
dc.contributor.authorMeng, H.Y.
dc.date.accessioned2014-06-17T03:06:47Z
dc.date.available2014-06-17T03:06:47Z
dc.date.issued2010-06-01
dc.identifier.citationMa, M.J., Jalil, M.B.A., Tan, S.G., Meng, H.Y. (2010-06-01). Spin-flip effects in a ferromagnetic/normal-metal island/ferromagnetic double tunnel junction system. Journal of Applied Physics 107 (11) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3410999
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/57492
dc.description.abstractWe theoretically study the spin dependent transport through a magnetic double tunnel junction system, which consists of a nonmagnetic metal island sandwiched by two ferromagnetic electrodes. The transport model in both cotunneling and sequential tunneling regimes is based on the master equation, and systematically incorporates the effects of both intraisland spin-flip (SF) and SF during tunneling between the electrode and the island. We found that the tunnel magnetoresistance (TMR) in the cotunneling regime is impervious to either the intraisland SF or the tunneling SF effect. On the other hand, in the sequential tunneling regime, the TMR decreases with the increasing intraisland SF rate F and tunneling SF probability η(η<0.5). However, when the tunneling SF is much stronger, i.e., η>0.5, the TMR is enhanced by increasing the tunneling SF probability. The increase in the temperature suppresses the cotunneling TMR, whereas the sequential tunneling TMR is found to be more robust to temperature variation. © 2010 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3410999
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentNUS NANOSCIENCE & NANOTECH INITIATIVE
dc.description.doi10.1063/1.3410999
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume107
dc.description.issue11
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000278907100142
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