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|Title:||Solid phase epitaxy during Ge condensation from amorphous SiGe layer on silicon-on-insulator substrate||Authors:||Balakumar, S.
|Issue Date:||2006||Citation:||Balakumar, S., Tung, C.H., Lo, G.Q., Kumar, R., Balasubramanian, N., Kwong, D.L., Fei, G., Lee, S.J. (2006). Solid phase epitaxy during Ge condensation from amorphous SiGe layer on silicon-on-insulator substrate. Applied Physics Letters 89 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2222343||Abstract:||We report the solid phase epitaxial growth of silicon germanium (SiGe) layer during condensation/ oxidation of sputter deposited amorphous SiGe layer on Si on insulator (SOI). The amorphous SiGe layer was first converted into polycrystalline film by preannealing and high temperature oxidation process. The solid phase epitaxial growth occurs during further oxidation/annealing process of polycrystalline SiGe on the Si on insulator substrate. A final thickness of about 1040 Å of single crystalline SiGe is achieved with initial amorphous SiGe and SOI of thickness of 1000 and 740 Å, respectively SiGe with 60% Ge concentration was achieved on further condensation followed by cyclic annealing to eliminate the defects formed in the layer. © 2006 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/57442||ISSN:||00036951||DOI:||10.1063/1.2222343|
|Appears in Collections:||Staff Publications|
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