Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2222343
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dc.titleSolid phase epitaxy during Ge condensation from amorphous SiGe layer on silicon-on-insulator substrate
dc.contributor.authorBalakumar, S.
dc.contributor.authorTung, C.H.
dc.contributor.authorLo, G.Q.
dc.contributor.authorKumar, R.
dc.contributor.authorBalasubramanian, N.
dc.contributor.authorKwong, D.L.
dc.contributor.authorFei, G.
dc.contributor.authorLee, S.J.
dc.date.accessioned2014-06-17T03:06:14Z
dc.date.available2014-06-17T03:06:14Z
dc.date.issued2006
dc.identifier.citationBalakumar, S., Tung, C.H., Lo, G.Q., Kumar, R., Balasubramanian, N., Kwong, D.L., Fei, G., Lee, S.J. (2006). Solid phase epitaxy during Ge condensation from amorphous SiGe layer on silicon-on-insulator substrate. Applied Physics Letters 89 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2222343
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/57442
dc.description.abstractWe report the solid phase epitaxial growth of silicon germanium (SiGe) layer during condensation/ oxidation of sputter deposited amorphous SiGe layer on Si on insulator (SOI). The amorphous SiGe layer was first converted into polycrystalline film by preannealing and high temperature oxidation process. The solid phase epitaxial growth occurs during further oxidation/annealing process of polycrystalline SiGe on the Si on insulator substrate. A final thickness of about 1040 Å of single crystalline SiGe is achieved with initial amorphous SiGe and SOI of thickness of 1000 and 740 Å, respectively SiGe with 60% Ge concentration was achieved on further condensation followed by cyclic annealing to eliminate the defects formed in the layer. © 2006 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2222343
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.2222343
dc.description.sourcetitleApplied Physics Letters
dc.description.volume89
dc.description.issue3
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000239174100052
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