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https://doi.org/10.1063/1.3579242
DC Field | Value | |
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dc.title | Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrate | |
dc.contributor.author | Han, G. | |
dc.contributor.author | Guo, P. | |
dc.contributor.author | Yang, Y. | |
dc.contributor.author | Zhan, C. | |
dc.contributor.author | Zhou, Q. | |
dc.contributor.author | Yeo, Y.-C. | |
dc.date.accessioned | 2014-06-17T03:05:47Z | |
dc.date.available | 2014-06-17T03:05:47Z | |
dc.date.issued | 2011-04-11 | |
dc.identifier.citation | Han, G., Guo, P., Yang, Y., Zhan, C., Zhou, Q., Yeo, Y.-C. (2011-04-11). Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrate. Applied Physics Letters 98 (15) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3579242 | |
dc.identifier.issn | 00036951 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/57401 | |
dc.description.abstract | Si-based tunneling field-effect transistors (TFETs) with elevated Ge source were fabricated on Si(110) substrate. The in situ B-doped Ge (Ge:B) source grown on Si(110) has a substitutional B concentration up to 7.8× 1020 cm-3, that is more than one order of magnitude higher than that in Ge grown on Si(100) under the same growth conditions. Ge:B epitaxy on (110) and (100) Si is discussed. The TFET with elevated Ge source formed on Si(110) has a subthreshold swing of 85 mV/decade, which is a substantial improvement over that of the control TFET formed on Si(100). This is attributed to the high B doping concentration in the Ge:B(110) source as well as the band gap narrowing effect. © 2011 American Institute of Physics. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3579242 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1063/1.3579242 | |
dc.description.sourcetitle | Applied Physics Letters | |
dc.description.volume | 98 | |
dc.description.issue | 15 | |
dc.description.page | - | |
dc.description.coden | APPLA | |
dc.identifier.isiut | 000289580800068 | |
Appears in Collections: | Staff Publications |
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