Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.2083930
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dc.titleSelf-assembled tungsten nanocrystals in high- k dielectric for nonvolatile memory application
dc.contributor.authorSamanta, S.K.
dc.contributor.authorTan, Z.Y.L.
dc.contributor.authorYoo, W.J.
dc.contributor.authorSamudra, G.
dc.contributor.authorLee, S.
dc.contributor.authorBera, L.K.
dc.contributor.authorBalasubramanian, N.
dc.date.accessioned2014-06-17T03:05:17Z
dc.date.available2014-06-17T03:05:17Z
dc.date.issued2005-11
dc.identifier.citationSamanta, S.K., Tan, Z.Y.L., Yoo, W.J., Samudra, G., Lee, S., Bera, L.K., Balasubramanian, N. (2005-11). Self-assembled tungsten nanocrystals in high- k dielectric for nonvolatile memory application. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 23 (6) : 2278-2283. ScholarBank@NUS Repository. https://doi.org/10.1116/1.2083930
dc.identifier.issn10711023
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/57359
dc.description.abstractDiscrete midgap tungsten nanocrystals (W-NCs) embedded in atomic layer deposited hafnium aluminate (HfAlO) film were fabricated by a self-assembly method using sputtering followed by rapid thermal annealing and integrated into transistors for nonvolatile memory application. Transmission electron microscopy and single electron diffraction analysis revealed the formation of crystalline W-NCs (∼5 nm) embedded in an amorphous HfAlO matrix. Effects of deposition of thin Al2 O3 on the formation of W-NCs were investigated. Al2 O3 was found to be effective to retain the amorphous property of the underlying HfAlO, assisting to form uniformly distributed and small W-NCs. Electrical characterization of the SiHfAlOW-NCsHfAlO structure based memory device showed that clear memory effects (1.8 V memory window at operating bias of 7 V) and good retention properties (50 mVdec threshold voltage decay rate) originate from the charge storage of electrons in W-NDs and deep quantum well of W-NDs embedded in the HfAlO+ Al2 O3 high- k structure. © 2005 American Vacuum Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1116/1.2083930
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1116/1.2083930
dc.description.sourcetitleJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
dc.description.volume23
dc.description.issue6
dc.description.page2278-2283
dc.description.codenJVTBD
dc.identifier.isiut000234613200007
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