Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jallcom.2006.02.086
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dc.titleSelective growth of gallium nitride nanowires by femtosecond laser patterning
dc.contributor.authorNg, D.K.T.
dc.contributor.authorHong, M.H.
dc.contributor.authorTan, L.S.
dc.contributor.authorZhou, Y.
dc.contributor.authorChen, G.X.
dc.date.accessioned2014-06-17T03:05:13Z
dc.date.available2014-06-17T03:05:13Z
dc.date.issued2008-01-31
dc.identifier.citationNg, D.K.T., Hong, M.H., Tan, L.S., Zhou, Y., Chen, G.X. (2008-01-31). Selective growth of gallium nitride nanowires by femtosecond laser patterning. Journal of Alloys and Compounds 449 (1-2) : 250-252. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jallcom.2006.02.086
dc.identifier.issn09258388
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/57354
dc.description.abstractWe report on gallium nitride (GaN) nanowires grown using pulsed laser ablation, adopting the vapor-liquid-solid (VLS) growth mechanism. The GaN nanowires are obtained based on the principle that a catalyst is required to initiate the nanowires growth. Locations of the GaN nanowires are patterned using femtosecond laser and focused ion beam. Scanning electron microscopy (SEM) is used to characterize the nanowires. This patterning of GaN nanowires will enable selective growth of nanowires and bottom-up assembly of integrated electronic and photonic devices. © 2006 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.jallcom.2006.02.086
dc.sourceScopus
dc.subjectFemtosecond laser
dc.subjectNanopatterning
dc.subjectNanowire
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentNUS NANOSCIENCE & NANOTECH INITIATIVE
dc.description.doi10.1016/j.jallcom.2006.02.086
dc.description.sourcetitleJournal of Alloys and Compounds
dc.description.volume449
dc.description.issue1-2
dc.description.page250-252
dc.description.codenJALCE
dc.identifier.isiut000252737500057
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