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|Title:||Selective growth of gallium nitride nanowires by femtosecond laser patterning||Authors:||Ng, D.K.T.
|Issue Date:||31-Jan-2008||Citation:||Ng, D.K.T., Hong, M.H., Tan, L.S., Zhou, Y., Chen, G.X. (2008-01-31). Selective growth of gallium nitride nanowires by femtosecond laser patterning. Journal of Alloys and Compounds 449 (1-2) : 250-252. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jallcom.2006.02.086||Abstract:||We report on gallium nitride (GaN) nanowires grown using pulsed laser ablation, adopting the vapor-liquid-solid (VLS) growth mechanism. The GaN nanowires are obtained based on the principle that a catalyst is required to initiate the nanowires growth. Locations of the GaN nanowires are patterned using femtosecond laser and focused ion beam. Scanning electron microscopy (SEM) is used to characterize the nanowires. This patterning of GaN nanowires will enable selective growth of nanowires and bottom-up assembly of integrated electronic and photonic devices. © 2006 Elsevier B.V. All rights reserved.||Source Title:||Journal of Alloys and Compounds||URI:||http://scholarbank.nus.edu.sg/handle/10635/57354||ISSN:||09258388||DOI:||10.1016/j.jallcom.2006.02.086|
|Appears in Collections:||Staff Publications|
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