Please use this identifier to cite or link to this item: https://doi.org/10.1166/nnl.2012.1424
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dc.titleReverse nanoimprint lithography for fabrication of nanostructures
dc.contributor.authorTavakkoli, A.K.G.
dc.contributor.authorRanjbar, M.
dc.contributor.authorPiramanayagam, S.N.
dc.contributor.authorWong, S.K.
dc.contributor.authorPoh, W.C.
dc.contributor.authorSbiaa, R.
dc.contributor.authorChong, T.C.
dc.date.accessioned2014-06-17T03:04:17Z
dc.date.available2014-06-17T03:04:17Z
dc.date.issued2012-08
dc.identifier.citationTavakkoli, A.K.G., Ranjbar, M., Piramanayagam, S.N., Wong, S.K., Poh, W.C., Sbiaa, R., Chong, T.C. (2012-08). Reverse nanoimprint lithography for fabrication of nanostructures. Nanoscience and Nanotechnology Letters 4 (8) : 835-838. ScholarBank@NUS Repository. https://doi.org/10.1166/nnl.2012.1424
dc.identifier.issn19414900
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/57272
dc.description.abstractWe investigate the applicability of reverse nanoimprint lithography (RNIL) to fabricate nanostructures. In this method, a thermal ultra-violet (UV) resist is first spin-coated onto a daughter mold directly and then the UV resist is transferred onto the desired surface by a UV-imprinting process at a very low temperature and low pressure. Discrete-track recording media at 50-nm track pitch were fabricated. The images from the scanning electron microscope showed that RNIL is capable of fabricating uniform patterns of nano-scale structures. Several advantages of RNIL over the existing methods are described, including the ease of using low molding pressure and temperature, the speed of imprinting, and the thinner residual layer. Copyright © 2012 American Scientific Publishers.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1166/nnl.2012.1424
dc.sourceScopus
dc.subjectMolding Pressure
dc.subjectNanofabrication
dc.subjectResidual Layer
dc.subjectReverse Nanoimprint Lithography
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1166/nnl.2012.1424
dc.description.sourcetitleNanoscience and Nanotechnology Letters
dc.description.volume4
dc.description.issue8
dc.description.page835-838
dc.identifier.isiut000309496400012
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