Please use this identifier to cite or link to this item: https://doi.org/10.1002/smll.200901173
DC FieldValue
dc.titleProbing layer number and stacking order of few-layer graphene by Raman Spectroscopy
dc.contributor.authorHao, Y.
dc.contributor.authorWang, Y.
dc.contributor.authorWang, L.
dc.contributor.authorNi, Z.
dc.contributor.authorWang, Z.
dc.contributor.authorWang, R.
dc.contributor.authorKoo, C.K.
dc.contributor.authorShen, Z.
dc.contributor.authorThong, J.T.L.
dc.date.accessioned2014-06-17T03:02:31Z
dc.date.available2014-06-17T03:02:31Z
dc.date.issued2010-01-18
dc.identifier.citationHao, Y., Wang, Y., Wang, L., Ni, Z., Wang, Z., Wang, R., Koo, C.K., Shen, Z., Thong, J.T.L. (2010-01-18). Probing layer number and stacking order of few-layer graphene by Raman Spectroscopy. Small 6 (2) : 195-200. ScholarBank@NUS Repository. https://doi.org/10.1002/smll.200901173
dc.identifier.issn16136810
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/57123
dc.description.abstractLayer number and stacking order of few-layer graphene (FLG) are of particular interest since they directly determine the performance of graphenebased electronic devices. By analyzing Raman spectra and Raman images, quantitative indices are extracted to discriminate the thickness of ABstacked FLG from single- to five-layer graphene; a few key spectral characteristics are also identified for FLG with misoriented stacking electronic structure graphene, Raman spectroscopy, stacking. © 2010 Wlley-VCH Verlag GmbH & Co. KGaA.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1002/smll.200901173
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentPHYSICS
dc.description.doi10.1002/smll.200901173
dc.description.sourcetitleSmall
dc.description.volume6
dc.description.issue2
dc.description.page195-200
dc.identifier.isiut000274363800007
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